摘要：

Two-dimensional materials such as graphene and MoS2 have attracted intense interest as alternative electronic materials in the post-silicon era. Despite intense interest and effort to date, it remains an open question whether 2DSC transistors can offer competitive performance matching up to exceeding that of the silicon devices. To achieve a high performance (high on-current) device requires a pristine channel with high carrier mobility, an optimized contact with low contact resistance and an ultrashort channel length. The simultaneous optimization of these device parameters is of considerable challenge for the atomically thin 2DSCs. Here I will review various strategies for optimizing these factors, and discuss how these strategies can be combined together to push the limit of 2D transistors. Additionally, I will also discuss a new design of 2D-material-based vertical transistors that can enable new device functions or unprecedented combination of device performance and flexibility and a series of tunable photonic devices. I will conclude with a brief summary of the current challenges and future opportunities in 2D electronics.

报告人简介:

Dr. Duan received his B.S. Degree from University of Science and Technology of China in 1997, and Ph.D. degree from Harvard University in 2002. He was a Founding Scientist and then Manager of Advanced Technology at Nanosys Inc., a nanotechnology startup founded based partly on his doctoral research. Dr. Duan joined UCLA with a Howard Reiss Career Development Chair in 2008, and was promoted to Associate Professor in 2012 and Full Professor in 2013. Dr. Duan’s research interest includes nanoscale materials, devices and their applications in future electronic, energy and health technologies. A strong emphasis is placed on the hetero-integration of multi-composition, multi-structure and multi-function at the nanoscale, and by doing so, creating a new generation of integrated nanosystems with unprecedented performance or unique functions to break the boundaries of traditional technologies. Dr. Duan has published over 200 papers with over 30,000 citations, and holds over 40 issued US patents. For his pioneer research in nanoscale science and technology, Dr. Duan has received many awards, including MIT Technology Review Top-100 Innovator Award, NIH Director’s New Innovator Award, NSF Career Award, Alpha Chi Sigma Glen T. Seaborg Award, Herbert Newby McCoy Research Award, US Presidential Early Career Award for Scientists and Engineers (PECASE), ONR Young Investigator Award, DOE Early Career Scientist Award, Human Frontier Science Program Young Investigator Award, Dupont Young Professor, Journal of Materials Chemistry Lectureship, International Union of Materials Research Society and Singapore Materials Research Society Young Researcher Award, the Beilby Medal and Prize, and the Nano Korea Award.