Abstract:

This talk will present the latest research progress on the atomic-level details of non-volatile resistance switching (NVRS) in 2D memory devices. In particular, we will focus on memory characteristics and atomistic imaging and transport studies, together with the first principle calculations on the common point defects of 2D materials. For this investigation, we employ the STM to characterize the vertical metal-insulator-metal (MIM) memory device and examine the defect sites in atomic resolution to elucidate memory phenomenon. These studies provide one to one correlation between the structural and electronic properties of the heterogeneities and their role in the resistance switching mechanism. Applications from RF switches to neuromorphic computing will be highlighted.

Biography:

Prof. Deji Akinwande is an Endowed Full Professor at the University of Texas at Austin. He received the PhD degree from Stanford University in 2009. His research focuses on 2D materials and nanoelectronics/technology, pioneering device innovations from lab towards applications. Prof. Akinwande has been honored with the 2018 Fulbright Specialist Award, 2017 Bessel-Humboldt Research Award, the U.S Presidential PECASE award, the inaugural Gordon Moore Inventor Fellow award, the inaugural IEEE Nano Geim and Novoselov Graphene Prize, the IEEE “Early Career Award” in Nanotechnology, the NSF CAREER award, several DoD Young Investigator awards, and was a past recipient of fellowships from the Kilby/TI, Ford Foundation, Alfred P. Sloan Foundation, 3M, and Stanford DARE Initiative. He serves as an Editor for the IEEE Electron Device Letters and Nature NPJ 2D Materials and Applications. He Chairs the 2020 Gordon Research Conference on 2D materials, and the 2019 Device Research Conference (DRC), and was the 2018 chair of the Nano-device committee of IEEE IEDM Conference He is a Fellow of the American Physical Society (APS).

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